IRF9540 P-channel Power MOSFET

## Vishay (วิเชย์) ##    IRF9540
Description
• PRODUCT SUMMARY VDS (V) -100
• RDS(on) (Ω) VGS = -10 V 0.20
• Qg max. (nC) 61
• Qgs (nC) 14
• Qgd (nC) 29
• Configuration Single
• Package TO-220AB
• Drain-source voltage VDS -100 V
• Gate-source voltage VGS ± 20  V
• Continuous drain current VGS at 10 V TC = 25 °C  ID -19 A
• Continuous drain current VGS at 10 V TC = 100 °C -13 A
• Pulsed drain current a IDM -72 A
• Linear derating factor 1.0 W/°C
• Single pulse avalanche energy b EAS 640 mJ
• Repetitive avalanche current a IAR -19 A
• Repetitive avalanche energy a EAR 15 mJ
• Maximum power dissipation TC = 25 °C PD 150 W
• Peak diode recovery dV/dt c dV/dt -5.5 V/ns
• Operating junction and storage temperature range TJ, Tstg -55 to +175 °C
• Soldering recommendations (peak temperature) d For 10 s 300 °C
• Mounting torque 6-32 or M3 screw  10 lbf · in  / 1.1 N · m
• Maximum junction-to-ambient RthJA - 62 C/W
• Case-to-sink, flat, greased surface RthCS 0.50 - °C/W
• Maximum junction-to-case (drain) RthJC - 1.0 C/W

Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.